DELAY STRUCTURES WITH PLANAR GUNN DEVICES.MAUSE K.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 17; PP. 408-409; BIBL. 8 REF.Article

MULTIPLEXING AND DEMULTIPLEXING TECHNIQUES WITH GUNN DEVICES IN THE GIGABIT-PER-SECOND RANGE.MAUSE K.1976; I.E.E.E. TRANS. MICROWASE THEORY TECH.; U.S.A.; DA. 1976; VOL. 24; NO 12; PP. 926-929; BIBL. 8 REF.Article

MEASUREMENTS OF THE INFLUENCE OF THE ND PRODUCT ON THE GUNN EFFECTSCHLACHETZKI A; MAUSE K.1972; ELECTRON. LETTERS; G.B.; DA. 1972; VOL. 8; NO 26; PP. 640-642; BIBL. 11 REF.Serial Issue

PLANAR GUNN DEVICES WITH CATHODE TIP.KURUMADA K; MAUSE K.1976; NACHR.-TECH. Z.; DTSCH.; DA. 1976; VOL. 29; NO 7; PP. 547-548; ABS. ALLEM.; BIBL. 7 REF.Article

CIRCUIT INTEGRATION OF GAAS GUNN DEVICES.MAUSE K; SCHLACHETZKI A; HESSE E et al.1974; I.E.E.E. TRANS. COMMUNIC.; U.S.A.; DA. 1974; VOL. 22; NO 9; PP. 1435-1440; BIBL. 10 REF.Article

GUNN DEVICE GIGABIT RATE DIGITAL MICROCIRCUITS.MAUSE K; SCHLACHETZKI A; HESSE E et al.1975; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1975; VOL. 10; NO 1; PP. 2-11; BIBL. 21 REF.Article

Nonalloyed ohmic contact for p⁺-type InGaAs base layer in HBTsRESSEL, P; VOGEL, K; FRITZSCHE, D et al.Electronics Letters. 1992, Vol 28, Num 24, pp 2237-2238, issn 0013-5194Article

Electron diffusion length in InGaAs:Zn derived from heterostructure bipolar transistorsKUPHAL, E; MAUSE, K; MIETHE, K et al.Solid-state electronics. 1995, Vol 38, Num 4, pp 795-799, issn 0038-1101Article

MOVPE growth for an integrated InGaAs/InP PIN-HBT receiver using Zn-doped p⁺-InGaAs layersEISENBACH, A; GOLDHORN, A; KUPHAL, E et al.Journal of crystal growth. 1997, Vol 170, Num 1-4, pp 451-455, issn 0022-0248Conference Paper

Fully self-aligned N-p-n InGaAs/InP HBTs with evaluation of their microwave characteristicsPITZ, G; HARTNAGEL, H. L; MAUSE, K et al.Solid-state electronics. 1992, Vol 35, Num 7, pp 937-939, issn 0038-1101Article

1.3μm monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAsHURM, V; BENZ, W; MAUSE, K et al.Electronics Letters. 1995, Vol 31, Num 1, pp 67-68, issn 0013-5194Article